• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to a new type of etching liquid composition for etching a multilayer film and a single film containing an aluminum or aluminum alloy layer, 56 to 70% by weight of phosphoric acid, 2 to 7% by weight of nitric acid, 7 to 7% by weight of the total composition Provided is an etchant composition containing 15% by weight, 0.1-3% by weight of potassium-based compound and water such that the total weight of the total composition is 100% by weight. According to the present invention, as the size of the substrate increases, the uniformity of the taper angle of the metal used for the gate and the data can be controlled with the existing phosphoric acid, nitric acid, and acetic acid types, and the side etching is good within 0.6 µm. Etch characteristics can be provided.
    公开号:KR20040029289A
    申请号:KR1020030080557
    申请日:2003-11-14
    公开日:2004-04-06
    发明作者:이승용；이재연；최용석；천승환；박영철
    申请人:동우 화인켐 주식회사；
    IPC主号:
    专利说明:

    ETCHANT COMPOSITION FOR ALUMINUM OR ALUMINUM ALLOY SINGLE LAYER AND MULTI LAYERS}
    [1] The present invention relates to a novel etchant composition used for wet etching of a metal film in a semiconductor device, and more particularly to a multilayer film and a single layer containing an aluminum or aluminum alloy layer used during a thin film transistor liquid crystal display (TFT-LCD) process. A new type of etchant composition for etching a membrane.
    [2] The process of forming the metal wiring on the substrate in the semiconductor device is generally composed of a metal film forming process by sputtering, a photoresist forming process in a selective region by photoresist coating, exposure and development, and an etching process. And washing processes before and after individual unit processes. The etching process refers to a process of leaving a metal film in a selective region using a photoresist mask, and typically, a dry etching using a plasma or the like, or a wet etching using an etching solution is used.
    [3] In such semiconductor devices, metals commonly used as wiring materials for TFT-LCDs are aluminum or aluminum alloys, and pure aluminum is used in the form of aluminum alloys because it is poorly resistant to chemicals and can cause wiring bonding problems in subsequent processes. Or a multi-layered laminate structure having another metal layer, such as molybdenum, chromium, tungsten, tin or the like, on the aluminum or aluminum alloy layer.
    [4] For example, a Mo / Al-Nd double layer can be commonly etched with a phosphate-based aluminum etchant, but since the Mo overhang occurs due to the difference in etching rates between the two layers, it is known to dry etch such an overhang in a subsequent process. .
    [5] As described above, when the metal film for forming wiring of a semiconductor device such as a TFT-LCD has a multilayer structure, it is common to apply a wet process and a dry process together to compensate for the disadvantages of each other.
    [6] When wet etching Mo / Al-Nd bilayer with aluminum etching liquid according to the prior art, the cross section in which the upper Mo layer protrudes outward from the lower Al-Nd layer because the etching rate of the upper Mo layer is smaller than that of the aluminum alloy layer. Indicates a bad profile that has This poor profile results in poor step coverage in subsequent processes and increases the likelihood that the top layer is disconnected from the slope or the upper and lower metals are shorted. In this case, it is common to apply a two-step process of wet etching first with an aluminum etching solution and dry etching secondly with the upper layer protruding out of the lower layer due to the difference in etching rate. It is disadvantageous in terms of productivity and cost, and there are problems such as product damage.
    [7] In response to this prior art, Patent Application No. 1999-41119 filed by the applicant (published number 2001-28729) discloses a phosphoric acid-based component etching solution, and specifically changes the composition ratio of phosphoric acid, nitric acid and acetic acid. This eliminates the bad profile that the upper Mo layer has in cross section protruding out of the lower aluminum alloy layer, and obtains an excellent profile so that no additional dry etching is required, so that compared to the prior art of the two step process The etching was very simple and economical.
    [8] However, as the size of the substrate increases, there is a limit to having a uniform taper angle with existing products.
    [9] Accordingly, the present inventors have diligently tried to solve these problems, and as a result, by adding an additive of a potassium-based compound to a conventional aluminum etchant, that is, phosphoric acid, nitric acid, and acetic acid, an etchant having a characteristic different from the existing type could be developed. The new type of etching solution is used for multi layer and single layer containing aluminum or aluminum alloy layer such as Mo / Al-Nd, Mo / Al / Mo, Mo / Al-Nd / Mo, etc. The present invention has been found to completely solve the shortcomings of an increase in side etching due to a poor aluminum inclination angle, a uniformity problem, and a difference in panel and pad etching.
    [10] According to the present invention, in the conventional phosphate system, as the size of the panel increases, the uniformity decrease due to the difference in partial etching time of the panel, the staining occurs, the problem of poor etching of the upper or lower metal, and the problem of inclined angle There is an advantage that can be solved.
    [11] As a result, an object of the present invention is to provide an etching solution composition which solves the problem of uniformity which is a problem in the phosphate-based etchant as the size of the panel of the multilayer film and the single film containing the aluminum or aluminum alloy layer used during the TFT-LCD process increases. (Hereinafter referred to as "aluminum etchant composition").
    [12] As means for realizing the present invention, there is provided an etching liquid composition consisting of phosphoric acid, nitric acid, acetic acid, potassium-based compound and water.
    [13] More specifically, 56 to 70% by weight of phosphoric acid, 2 to 7% by weight of nitric acid, 7 to 15% by weight of acetic acid, 0.1 to 3% by weight of potassium-based compound and 100% by weight of the total composition of the total composition An etchant composition containing water is provided.
    [14] As a more preferred embodiment of the present invention, the present invention comprises 60 to 70% by weight of phosphoric acid, 4 to 7% by weight of nitric acid, 8 to 11% by weight of acetic acid, 0.1 to 2% by weight of potassium-based compound and 100% by weight of the total composition. An etchant composition containing water to be% is provided. Hereinafter, the present invention will be described in more detail.
    [15] The etchant composition according to the present invention is an etchant for etching a multilayer film and a single film containing an aluminum or aluminum alloy layer.
    [16] The aluminum or aluminum alloy multilayer film in the present invention means a multilayer film made of an aluminum film and another metal film. For example, in the case of a Mo / Al-Nd double film, the Mo film is the upper film and the Al-Nd film is the lower film, or vice versa, and the Mo / Al / Mo, Mo / Al-Nd / Mo triple film is Mo. The upper and lower films are used, and pure Al and Al-Nd films are used as intermediate films.
    [17] In the present invention, the aluminum or aluminum alloy single film means a film made of an aluminum film. In this case, the aluminum film includes a metal film made of aluminum alone or an alloy composed mainly of aluminum, and pure aluminum is generally provided in the form of an aluminum alloy because it is weak in chemical resistance and may cause wiring bonding problems in subsequent processes. Al-Nd films alloyed with Nd are preferably used.
    [18] The type of potassium compound used in the aluminum etchant composition of the present invention is not particularly limited, but for example, KC 2 H 3 O 2 , K 2 CO 3 , KClO 3 , KCl, KF, KHSO 4 , KNO 3 , K 2 C 2 O 4 , KClO 4 , K 2 O 8 S 2 , KH 2 PO 4 , K 2 HPO 4 , K 2 SO 4 , and the like, and preferably KNO 3 .
    [19] EXAMPLE
    [20] Examples 1-18
    [21] Mo / Al-Nd bilayer, Mo / Al / Mo, and Mo / Al-Nd / Mo triple layer substrates were prepared. An etching solution containing phosphoric acid, nitric acid, acetic acid, potassium nitrate and the remaining water in a composition ratio with respect to the total weight of the total composition shown in Table 1 was prepared to be 180 kg. An etching solution prepared in a spray etching method (manufactured by KDNS, model name: ETCHER (TFT)) was added thereto, warmed by setting the temperature to 40 ° C, and the etching process was performed when the temperature reached 40 ± 0.5 ° C. O / E (Over Etch) was performed at 30% and 50% based on EPD (End Point Detection) of the pad part. After the substrate was inserted and spraying was started and the etching was completed, the substrate was taken out, washed with deionized water, dried using a hot air dryer, and removed using a photoresist stripper. After washing and drying, the etching profile was evaluated by using an electron scanning microscope (SEM; manufactured by HITACHI, model name: S-4700) with an inclination angle, loss of side etching CD (critical dimension), and etching residue. The results are shown in Table 1.
    [22] ExampleBoardComposition (wt%) (phosphoric acid / nitric acid / acetic acid / potassium compound / water)Tilt angle (degrees)CD (μm)evaluation 30%50%30%50% OneMo / Al-Nd70/3/10 / 0.5 / 16.565600.40.6Good 269/5/10/1/1565600.40.55Good 365/4/10/2/1960600.30.4Great 465/6/9 / 0.5 / 19.560580.30.4Great 560/4/9/1/2662600.40.55Good 660/7/10/3/2065600.450.6Good 7Mo / Al / Mo70/3/10 / 0.5 / 16.570720.350.5Good 869/5/10/1/1568690.40.55Good 965/4/10/2/1970700.30.4Great 1065/6/9 / 0.5 / 19.568700.30.35Great 1160/4/9/1/2665660.40.55Good 1260/7/10/3/2060620.450.6Good 13Mo / Al-Nd / Mo70/3/10 / 0.5 / 16.570720.350.5Good 1469/5/10/1/1568690.370.55Good 1565/4/10/2/1970700.30.4Great 1665/6/9 / 0.5 / 19.568700.30.35Great 1760/4/9/1/2665660.40.55Good 1860/7/10/3/2062620.420.59Good
    [23] Comparative Examples 1 to 3
    [24] Mo / Al-Nd bilayer, Mo / Al / Mo, and Mo / Al-Nd / Mo triple layer substrates were prepared. An etching solution containing phosphoric acid, nitric acid, acetic acid, potassium nitrate and the remaining water in a composition ratio with respect to the total weight of the total composition shown in Table 2 was prepared to be 180 kg. It evaluates by the method similar to the following Example, and shows the result in Table 2.
    [25] Comparative exampleBoardComposition (% by weight) (phosphate / nitrate / potassium compound / water)Tilt angle (degrees)CD (μm)evaluation 30%50%30%50% OneMo / Al-Nd64/5/10/5/16Overhang--Bad 2Mo / Al / Mo64/5/10/5/16Overhang--Bad 3Mo / Al-Nd / Mo64/5/10/5/16Overhang--Bad
    [26] The present invention relates to a new type of etchant composition for etching a multilayer film and a single film containing an aluminum or aluminum alloy layer, there is no dependence of equipment, it is possible to etch a variety of substrates containing aluminum, It is possible to provide an etching liquid having very good etching characteristics with an inclination angle of 75 degrees or less.
    权利要求:
    Claims (2)
    [1" claim-type="Currently amended] 56 to 70% by weight of phosphoric acid, 2 to 7% by weight of nitric acid, 7 to 15% by weight of acetic acid, 0.1 to 3% by weight of potassium compound and 100% by weight of total composition An etchant composition for etching a multilayer and a single film containing an aluminum or aluminum alloy layer as an etchant composition.
    [2" claim-type="Currently amended] The method of claim 1, wherein the potassium compound is KC 2 H 3 O 2 , K 2 CO 3 , KClO 3 , KCl, KF, KHSO 4 , KNO 3 , K 2 C 2 O 4 , KClO 4 , K 2 O 8 S 2 , KH 2 PO 4 , K 2 HPO 4 and K 2 SO 4 The etchant composition characterized in that it is selected from the group consisting of.
    类似技术:
    公开号 | 公开日 | 专利标题
    KR101873583B1|2018-07-03|Manufacturing method of an array substrate for liquid crystal display
    TWI380133B|2012-12-21|Hardmask composition having antireflective properties and method of patterning material on substrate using the same
    JP5079959B2|2012-11-21|Improved packing material for dual damascene process
    US7498074B2|2009-03-03|Metal photoetching product and production method thereof
    US5106786A|1992-04-21|Thin coatings for use in semiconductor integrated circuits and processes as antireflection coatings consisting of tungsten silicide
    JP4843637B2|2011-12-21|Etching solution and method for manufacturing electronic device including thin film transistor using the same
    US5160407A|1992-11-03|Low pressure anisotropic etch process for tantalum silicide or titanium silicide layer formed over polysilicon layer deposited on silicon oxide layer on semiconductor wafer
    KR101270560B1|2013-06-03|Composition for etching metal layer
    US4035276A|1977-07-12|Making coplanar layers of thin films
    WO2012057467A2|2012-05-03|Copper-containing etchant composition for a metal layer, and etching method using same
    US5599424A|1997-02-04|Method of manufacturing semiconductor devices
    JP2004193620A|2004-07-08|Etching solution for removing molybdenum residue from copper molybdenum film, and etching method therefore
    KR100673401B1|2007-01-24|Metallic material for electronic part, electronic part, electronic equipment, method of working metallic material, process for producing electronic part and electronic optical part
    JP3257533B2|2002-02-18|Wiring formation method using inorganic anti-reflection film
    US7291283B2|2007-11-06|Combined wet etching method for stacked films and wet etching system used for same
    KR20100035250A|2010-04-05|Cu or cu/mo or cu/mo alloy electrode etching liquid in liquid crystal display system
    KR20030084622A|2003-11-01|Etchant and method of etching
    US6989219B2|2006-01-24|Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks
    KR20060042256A|2006-05-12|Etching composition for laminated film including reflective electrode and method for forming laminated wiring structure
    CN102939407B|2016-04-20|For etching reagent and the method using it to manufacture metal wire of metal wire
    CN104419930B|2018-03-27|The manufacture method of etchant and array substrate for liquid crystal display device
    KR20080072462A|2008-08-06|Photo-resist composition, coating method thereof, method for patterning of organic film using the same and display device fabricated thereby
    KR101905195B1|2018-10-05|Etchant composition for Ag thin layer and method for fabricating metal pattern using the same
    JP5542376B2|2014-07-09|Etching composition, method of forming metal pattern using the same, and method of manufacturing thin film transistor array panel
    US20060189123A1|2006-08-24|Etchant and method of etching
    同族专利:
    公开号 | 公开日
    KR101057360B1|2011-08-17|
    KR20100037078A|2010-04-08|
    KR20050046570A|2005-05-18|
    KR100955200B1|2010-04-29|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2003-11-14|Application filed by 동우 화인켐 주식회사
    2003-11-14|Priority to KR1020030080557A
    2004-04-06|Publication of KR20040029289A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020030080557A|KR20040029289A|2003-11-14|2003-11-14|Etchant composition for aluminum or aluminum alloy single layer and multi layers|
    [返回顶部]